1999. 3. 9
1/3
SEMICONDUCTOR
TECHNICAL DATA
BC856/7/8
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
FEATURES
For Complementary With NPN Type BC846/847/848.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
BC856
V
CBO
-80
V
BC857
-50
BC858
-30
Collector-Emitter
Voltage
BC856
V
CEO
-65
V
BC857
-45
BC858
-30
Emitter-Base Voltage
BC856
V
EBO
-5
V
BC857
-5
BC858
-5
Collector Current
I
C
-100
mA
Emitter Current
I
E
100
mA
Collector Power Dissipation
P
C
*
350
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
MARK SPEC
Type Name
Marking
Lot No.
P
C
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
TYPE
BC856A
BC856B
BC857A
BC857B
BC857C
BC858A
BC858B
BC858C
MARK
3A
3B
3E
3F
3G
3J
3K
3L
1999. 3. 9
2/3
BC856/7/8
Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25 )
NOTE : According to the value of h
FE
the BC856, BC857, BC858 are classified as follows.
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-30V, I
E
=0
-
-
-15
nA
DC Current Gain (Note)
BC856
h
FE
V
CE
=-5V, I
C
=-2mA
125
-
475
BC857
125
-
800
BC858
125
-
800
Collector-Emitter Saturation Voltage
V
CE(sat)
1
I
C
=-10mA, I
B
=-0.5mA
-
-0.09
-0.3
V
V
CE(sat)
2
I
C
=-100mA, I
B
=-5mA
-
-0.25
-0.65
Base-Emitter Saturation Voltage
V
BE(sat)
1
I
C
=-10mA, I
B
=-0.5mA
-
-0.7
-
V
V
BE(sat)
2
I
C
=-100mA, I
B
=-5mA
-
-0.9
-
Base-Emitter Voltage
V
BE(ON1)
V
CE
=-5V, I
C
=-2mA
-0.6
-0.65
-0.75
V
Base-Emitter Voltage
V
BE(ON2)
V
CE
=-5V, I
C
=-10mA
-
-
-0.82
V
Transition Frequency
f
T
V
CE
=-5V, I
C
=-10mA, f=100MHz
-
150
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
4.5
-
pF
Noise Figure
NF
V
CE
=-6V, I
C
=-0.2mA
R
g
=2k , f=1kHz
-
2.0
10
dB
CLASSIFICATION
A
B
C
h
FE
BC856
125 250
220 475
-
BC857
125 250
220 475
420 800
BC858
125 250
220 475
420 800
1999. 3. 9
3/3
BC856/7/8
Revision No : 3
C
COLLECTOR CURRENT I (mA)
0
COLLECTOR CURRENT I (mA)
C
-0.1
-0.2
BASE-EMITTER VOLTAGE V (V)
BE
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
I - V
COLLECTOR-BASE VOLTAGE V (V)
CAPACITANCE C (pF)
ob
10
1
-1
-3
20
CB
-10
-30
C - V
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
-0.1
-0.3
FE
-1
-3
C
h - I
-4
-8
-12
-16
-20
-10
-20
-30
-40
-50
I =-400A
B
I =-350A
B
I =-50A
B
I =-100A
B
I =-150A
B
I =-200A
B
I =-250A
B
I =-300A
B
C
BE
-0.4
-0.6
-0.8
-1.0
-0.3
-0.5
-1
-3
-5
-10
-30
-50
-100
V =-5V
CE
FE
C
-10
-30
-100
10
30
50
100
300
500
1k
SATURATION VOLTAGE
-1
COLLECTOR CURRENT I (mA)
-0.1
-0.01
-0.03
-0.1
-0.3
-30
-3
-10
C
-100
BE(sat)
-0.3
-1
V , V - I
BE(sat)
C
CE(sat)
V , V (V)
CE(sat)
-3
-10
I /I =20
C
B
V
BE(sat)
V
CE(sat)
ob
CB
-100
-200
3
5
f=1MHz
I =0
E
V =-5V
CE
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